EUV & DUV Photolithography Projection Optics Twin
Lithography Parameter Tuning
Numerical Aperture (NA):
0.33
Process Factor (k1):
0.30
Rayleigh Resolution Equations
Critical Dimension ($CD = k_1 \frac{\lambda}{NA}$): 12.27 nm
Depth of Focus ($DOF = k_2 \frac{\lambda}{NA^2}$): 62.0 nm
Light Source Wavelength: 13.5 nm (EUV)
OPC Serifs: ACTIVE
AI Lithography Assistant
AI Assistant: Ask me about Rayleigh's resolution equation, High-NA EUV optics (0.55 NA), or Optical Proximity Correction (OPC)!