GARR Foundation — Dr. APJ Abdul Kalam ZERO RESEARCH FUNDING Lab

PHYSICAL HARDWARE EQUIVALENT

Semiconductor Parameter Analyzer

Precision SMU setup for PN-junction depletion, band bending, and MOSFET I-V sweep measurements.

IIT / IISc PHYSICAL SETUP COST

₹1,200,000 to ₹4,500,000
(₹12L - ₹45L)

Requires low-noise probe stations, sub-picoamp source measure units (SMUs), and thermal chucks.

INDIAN INSTITUTES PHYSICAL DEPLOYMENT

IISc Bengaluru, IIT Bombay, IIT Madras, IIT Kanpur

Microelectronics, Nanoscience & VLSI Device Fabrication Laboratories.

KALAM LAB ONLINE REPLACEMENT COST
₹0 (100% Free Open-Source)
Runs natively in web browsers on any smartphone or low-cost PC using HTML5 Canvas & Plotly.js.

Lab Modules & Experiments

Select a semiconductor physics module to visualize energy band diagrams and compute I-V characteristics:

Experiment 1: PN Junction Depletion Region & Energy Band Diagram — Observe band bending ($E_c, E_v, E_F, E_{Fi}$) under forward and reverse bias.
Experiment 2: MOS Capacitor Band Bending — Evaluate Accumulation, Depletion, and Inversion states under gate bias ($V_G$).
Experiment 3: Parameter Analyzer I-V Sweep — Measure diode exponential forward bias current and reverse saturation breakdown.

Interactive Workbench — Experiment 1: PN Junction Depletion & Band Diagram ● Parameter Analyzer Active

Semiconductor Substrate

Acceptor Doping ($N_A$): 10^16 cm⁻³

Donor Doping ($N_D$): 10^16 cm⁻³

Applied Bias ($V_A$): 0.00 V

Temperature ($T$): 300 K

Energy Band Diagram Visualizer

Parameter Analyzer I-V Characteristic

Built-in Potential ($V_{bi}$)

0.718 V

Depletion Width ($W$)

0.305 µm

Peak Electric Field ($E_{max}$)

47.1 kV/cm