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KRISHNA - Advanced Transistor & 3D Heterogeneous Packaging Lab

Sub-2nm Gate-All-Around (GAA) Nanosheets, 2.5D Interposers, TSVs & 3D Chiplet Systems

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Gopalkrishna Advanced Rural Research Foundation • Gopalkrishna Advanced Rural Research Foundation •
p-Type Silicon Substrate (300mm Bulk Wafer) ARCHITECTURE: Gate-All-Around (GAA) Nanosheet (2nm Node)
STATUS: Live Gate-All-Around (GAA) Electron Motion
Multi-Step Packaging Guided Lab

Interactive Heterogeneous System Workstation

Subthreshold Current-Voltage (I-V) Characteristics

REAL-TIME SIMULATION

What Changed? Physics & Observation

Changing from Planar to GAA Nanosheet provides gate electrostatic control from all 4 sides, reducing Subthreshold Swing (SS) towards the theoretical limit of ~60 mV/dec and suppressing Drain-Induced Barrier Lowering (DIBL).

Key Metric: Subthreshold Swing: 63.5 mV/dec | Ion/Ioff: 1.4e7

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