5nm Virtual Twin
RISC-V + AI DSP
KRISHNA Silicon Processor Wafer
Virtual Twin Active
Process Workflow Step 4/6
Explore Virtual Twins (Click to Launch Simulation) 4 Active Twins
Chip Twin
Transistor & Power Delay
Wafer Twin
300mm Die Yield Map
Equipment Twin
Plasma Chamber Telemetry
Fab Twin
Cleanroom OEE & AMHS
What Changed? What Did We Observe?
Active Experiment 4: Etch Process Optimization
Baseline
10 baseline
Simulated
45 value
Etch trench depth recalculated dynamically.
Anisotropic plasma beam focus maintained.
Key Learning: Process parameters must be balanced. More is not always better!