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GOPALKRISHNA ADVANCED RURAL RESEARCH FOUNDATION

Semiconductor Metrology & Characterization Virtual Lab

CD-SEM Nanometrology, AFM Topography, Ellipsometric Film Thickness & 4-Point Probe Resistivity

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Interactive Metrology Instrument Studio

Gopalkrishna Advanced Rural Research Foundation • Gopalkrishna Advanced Rural Research Foundation •
Electron Gun Field Emission (FEG) Objective Lens Coil SE Detector Substrate Wafer Target CD = 14.2 nm MODE: Critical Dimension Scanning Electron Microscope (CD-SEM)
STATUS: Live Beam Focusing & Secondary Electron Collection
Multi-Stage Characterization Guided Lab

Metrology Experiment Workstation

Secondary Electron Intensity Profile

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Metrology Physics & Observation

Increasing accelerating voltage narrows electron beam spot size, improving edge resolution for sub-15nm Critical Dimension (CD) gate line measurements.

Measured Value: CD Linewidth: 14.2 nm | Resolution: 0.8 nm

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AI Assistant: Welcome to the Semiconductor Metrology & Characterization Virtual Lab! Select an experiment stage above or ask me any question regarding Critical Dimension SEM linewidths, AFM atomic resolution, ellipsometer thin-film phase shifts, or 4-point probe sheet resistance!